MURT10060
DIODE ARRAY GP 600V 100A 3TOWER

From GeneSiC Semiconductor

CategoryDiscrete Semiconductor Products
Current - Average Rectified (Io) (per Diode)100A (DC)
Current - Reverse Leakage @ Vr25µA @ 50V
DatasheetsMURT10040 thru 10060R Three Tower Pkg Drawing
Diode Configuration-
Diode TypeStandard
FamilyDiodes, Rectifiers - Arrays
Mounting TypeChassis Mount
Other NamesMURT10060GN
Package / CaseThree Tower
PackagingBulk
Reverse Recovery Time (trr)75ns
Series-
SpeedFast Recovery = 200mA (Io)
Standard Package25
Supplier Device PackageThree Tower
Voltage - DC Reverse (Vr) (Max)600V
Voltage - Forward (Vf) (Max) @ If1.7V @ 100A

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