GA10JT12-263 TRANS SJT 1.2KV 10A
From GeneSiC Semiconductor
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Datasheets | GA10JT12-263 |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| FET Feature | Super Junction |
| FET Type | Silicon Carbide, Normally Off |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | - |
| Input Capacitance (Ciss) @ Vds | 1403pF @ 800V |
| Mounting Type | Surface Mount |
| Online Catalog | Silicon Carbide (SiC) Super Junction FETs |
| Other Names | 1242-1186 GA10JT12-220ISO GA10JT12220ISO |
| Package / Case | - |
| Packaging | Tube |
| Power - Max | 170W |
| Product Photos | TO263-3 |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 10A |
| Series | - |
| Standard Package | 50 |
| Supplier Device Package | - |
| Vgs(th) (Max) @ Id | - |
