1N8026-GA DIODE SILICON 1.2KV 8A TO257
From GeneSiC Semiconductor
| Capacitance @ Vr, F | 237pF @ 1V, 1MHz |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 8A (DC) |
| Current - Reverse Leakage @ Vr | 10µA @ 1200V |
| Datasheets | 1N8026-GA |
| Diode Type | Silicon Carbide Schottky |
| Family | Diodes, Rectifiers - Single |
| Mounting Type | Through Hole |
| Online Catalog | Silicon Carbide Power Schottky Diode |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Other Names | 1242-1113 1N8026GA |
| Package / Case | TO-257-3 |
| Packaging | Tube |
| Product Photos | 1N80xx-GA |
| Reverse Recovery Time (trr) | 0ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |
| Standard Package | 10 |
| Supplier Device Package | TO-257 |
| Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) |
| Voltage - Forward (Vf) (Max) @ If | 1.6V @ 2.5A |
