Product Datasheet Search Results:

GT60N321.pdf6 Pages, 178 KB, Original
GT60N321
Toshiba
IGBT 1000V 60A TO-3P LH - GT60N321(Q)
GT60N321(Q).pdf6 Pages, 178 KB, Original
GT60N321(Q)
Toshiba
Trans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-3P(LH)
GT60N321Q.pdf6 Pages, 202 KB, Original
GT60N321Q
Toshiba
Trans IGBT Chip N-CH 1000V 60A 170000mW 3-Pin(3+Tab) TO-3PL

Product Details Search Results:

Toshiba.co.jp/GT60N321
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE, 2-21F2C, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"700 ns","Collector-emitter Voltage-Max":"1000 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"330 ns","Collector Current-Max (IC)":"60 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position...
1406 Bytes - 20:01:10, 18 December 2024
Toshiba.co.jp/GT60N321(Q)
{"Collector Current (DC) ":"60 A","Collector Current (DC) (Max)":"60 A","Collector-Emitter Voltage":"1000 V","Mounting":"Through Hole","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"\ufffd25 V","Channel Type":"N","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-3P(LH)","Configuration":"Single","Pin Count":"3","Operating Temperature (Min)":"-55C"}...
1453 Bytes - 20:01:10, 18 December 2024
Toshiba.co.jp/GT60N321Q
{"Collector Current (DC) ":"60(A)","Operating Temperature (Min)":"-55C","Collector-Emitter Voltage":"1000(V)","Mounting":"Through Hole","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b125(V)","Channel Type":"N","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-3PL","Configuration":"Single","Pin Count":"3 +Tab"}...
1462 Bytes - 20:01:10, 18 December 2024
Toshiba.semicon-storage.com/GT60N321(Q)
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"60A","Mounting Type":"Through Hole","Family":"IGBTs - Single","Switching Energy":"-","Series":"-","Package / Case":"TO-3PL","Vce(on) (Max) @ Vge, Ic":"2.8V @ 15V, 60A","Voltage - Collector Emitter Breakdown (Max)":"1000V","Gate Charge":"-","Reverse Recovery Time (trr)":"2.5\u00b5s","Td (on/off) @ 25\u00b0C":"330ns/700ns","Power - Max":"170W","Supplier Device Package":"TO-3P(LH)","Current - Collector Pulsed (Icm)":"120A","Input T...
1536 Bytes - 20:01:10, 18 December 2024

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