Product Datasheet Search Results:
- GT25Q102(Q)
- Toshiba
- Trans IGBT Chip N-CH 1200V 25A 200000mW 3-Pin(3+Tab) TO-3PL
Product Details Search Results:
Toshiba.co.jp/GT25Q102
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE, 2-21F2C, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"680 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"300 ns","Collector Current-Max (IC)":"25 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position...
1406 Bytes - 01:53:58, 19 December 2024
Toshiba.co.jp/GT25Q102(Q)
{"Collector Current (DC) ":"25(A)","Collector Current (DC) (Max)":"25 A","Collector-Emitter Voltage":"1200(V)","Mounting":"Through Hole","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-3PL","Configuration":"Single","Pin Count":"3 +Tab","Operating Temperature (Min)":"-55C"}...
1466 Bytes - 01:53:58, 19 December 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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MGT25Q101.pdf | 0.00 | 1 | Request |