Product Details Search Results:
Gansystems.com/GS66502B-E01-TY
{"Mounting Style":"SMD/SMT","Vds - Drain-Source Breakdown Voltage":"650 V","Transistor Polarity":"N-Channel","Rds On - Drain-Source Resistance":"560 mOhms","Channel Mode":"Enhancement","Maximum Operating Temperature":"+ 150 C","Brand":"GaN Systems","Id - Continuous Drain Current":"7 A","Vgs th - Gate-Source Threshold Voltage":"1.6 V","Packaging":"Tray","Product Category":"MOSFET","Qg - Gate Charge":"1.7 nC","Vgs - Gate-Source Breakdown Voltage":"+/- 10 V","Configuration":"Single","Technology":"GaN","Minimum...
1605 Bytes - 01:45:57, 22 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| MBM150GS6AW.pdf | 0.09 | 1 | Request | |
| MBB200GS6AW.pdf | 0.15 | 1 | Request | |
| MBM300GS6AW.pdf | 0.09 | 1 | Request | |
| MBN200GS6AW.pdf | 0.09 | 1 | Request | |
| MBN400GS6AW.pdf | 0.32 | 1 | Request | |
| MBM600GS6CW.pdf | 0.10 | 1 | Request | |
| MBN300GS6AW.pdf | 0.08 | 1 | Request | |
| MBM400GS6AW.pdf | 0.09 | 1 | Request | |
| MBM200GS6AW.pdf | 0.09 | 1 | Request | |
| ERG1FGS620D.pdf | 0.92 | 1 | Request | |
| ERG1FGS683D.pdf | 0.92 | 1 | Request | |
| ERG1FGS621D.pdf | 0.92 | 1 | Request |
