Product Datasheet Search Results:

GS61008T-E01-TY.pdf6 Pages, 1239 KB, Original
GS61008T-E01-TY
Gan Systems
MOSFET 100V 90A E-Mode GaN Preproduction Units

Product Details Search Results:

Gansystems.com/GS61008T-E01-TY
{"Mounting Style":"SMD/SMT","Vds - Drain-Source Breakdown Voltage":"100 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Maximum Operating Temperature":"+ 150 C","Brand":"GaN Systems","Id - Continuous Drain Current":"80 A","Vgs th - Gate-Source Threshold Voltage":"1.6 V","Packaging":"Tray","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"7.4 mOhms","Vgs - Gate-Source Breakdown Voltage":"+/- 10 V","Configuration":"Single","Technology":...
1563 Bytes - 11:20:18, 24 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
MBM150GS6AW.pdf0.091Request
MBB200GS6AW.pdf0.151Request
MBM300GS6AW.pdf0.091Request
MBN200GS6AW.pdf0.091Request
MBN400GS6AW.pdf0.321Request
MBM600GS6CW.pdf0.101Request
MBN300GS6AW.pdf0.081Request
MBM400GS6AW.pdf0.091Request
MBM200GS6AW.pdf0.091Request
ERG1FGS620D.pdf0.921Request
ERG1FGS683D.pdf0.921Request
ERG1FGS621D.pdf0.921Request