Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"1076 ns","Collector Current-Max (IC)":"110 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"523 ns","EU RoHS Compliant":"Yes","Configuration":"SERIES, 2 ELEMENTS WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL","...

{"Factory Pack Quantity":"15","Product":"IGBT Silicon Modules","Product Category":"IGBT Modules","Minimum Operating Temperature":"- 40 C","Brand":"Vishay","Continuous Collector Current at 25 C":"110 A","Collector- Emitter Voltage VCEO Max":"1200 V","Packaging":"Bulk","Maximum Gate Emitter Voltage":"+/- 20 V","Mounting Style":"Screw","Package / Case":"INT-A-PAK","Configuration":"Dual","Maximum Operating Temperature":"+ 150 C","RoHS":"Details","Manufacturer":"Vishay"}...