{"Category":"Discrete Semiconductor Products","FET Feature":"Super Junction","Product Photos":"TO263-7","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Standard Package":"50","Supplier Device Package":"*","Datasheets":"GA10SICP12-263","Rds On (Max) @ Id, Vgs":"100 mOhm @ 10A","FET Type":"Silicon Carbide, Normally Off","Packaging":"*","Power - Max":"170W","Package \/ Case":"*","Mounting Type":"*","Drain to Source Voltage (Vdss)":"1200V (1.2kV)","Current - Continuous Drain (Id) @ 25\u00b0C":"2...