{"Category":"Discrete Semiconductor Products","FET Feature":"Super Junction","Vgs(th) (Max) @ Id":"-","Package \/ Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"10A (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"TO-247-3","Rds On (Max) @ Id, Vgs":"140 mOhm @ 10A","Datasheets":"GA10JT12-247","FET Type":"Silicon Carbide, Normally Off","Standard Package":"30","Drain to Source Voltage (Vdss)":"1200V (1.2kV)","Online Catalog":"Silicon Carbide (SiC) Super Junction FETs","Family":"FETs - Sin...