FHX35LG/002 Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
From Fujitsu Limited
Status | ACTIVE |
Case Connection | SOURCE |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 6 V |
FET Technology | HIGH ELECTRON MOBILITY |
Mfr Package Description | METAL CERAMIC, CASE LG, 4 PIN |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | DEPLETION |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | UNSPECIFIED |
Package Style | DISK BUTTON |
Power Dissipation Ambient-Max | 0.2900 W |
Surface Mount | Yes |
Terminal Form | FLAT |
Terminal Position | UNSPECIFIED |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Transistor Type | RF SMALL SIGNAL |