1MBH05D-120 10 A, 1200 V, N-CHANNEL IGBT
From Fujitsu Limited
Status | ACTIVE |
Channel Type | N-CHANNEL |
Collector Current-Max (IC) | 10 A |
Collector-emitter Voltage-Max | 1200 V |
Configuration | SINGLE WITH BUILT-IN DIODE |
Mfr Package Description | TO-3PL, 3 PIN |
Number of Elements | 1 |
Number of Terminals | 3 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON |
Transistor Type | INSULATED GATE BIPOLAR |
Turn-off Time-Nom (toff) | 300 ns |
Turn-on Time-Nom (ton) | 160 ns |