2SK3924-01S 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET
From Fuji Electric Corp. of America
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 301 mJ |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 250 V |
Drain Current-Max (ID) | 14 A |
Drain-source On Resistance-Max | 0.2800 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Power Dissipation Ambient-Max | 1.67 W |
Pulsed Drain Current-Max (IDM) | 56 A |
Surface Mount | Yes |
Terminal Form | GULL WING |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |