2SK3779-01R 59 A, 250 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET
From Fuji Electric Corp. of America
| Status | ACTIVE |
| Avalanche Energy Rating (Eas) | 1115 mJ |
| Case Connection | ISOLATED |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 250 V |
| Drain Current-Max (ID) | 59 A |
| Drain-source On Resistance-Max | 0.0530 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Power Dissipation Ambient-Max | 3.13 W |
| Pulsed Drain Current-Max (IDM) | 236 A |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
