2SK3647-01
30 A, 100 V, 0.044 ohm, N-CHANNEL, Si, POWER, MOSFET

From Fuji Electric Corp. of America

StatusACTIVE
Avalanche Energy Rating (Eas)278 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)30 A
Drain-source On Resistance-Max0.0440 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionTFP, 4 PIN
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialUNSPECIFIED
Package ShapeSQUARE
Package StyleCHIP CARRIER
Power Dissipation Ambient-Max2.4 W
Pulsed Drain Current-Max (IDM)120 A
Surface MountYes
Terminal FormNO LEAD
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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