2SK3647-01 30 A, 100 V, 0.044 ohm, N-CHANNEL, Si, POWER, MOSFET
From Fuji Electric Corp. of America
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 278 mJ |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 30 A |
Drain-source On Resistance-Max | 0.0440 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | TFP, 4 PIN |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT |
Package Body Material | UNSPECIFIED |
Package Shape | SQUARE |
Package Style | CHIP CARRIER |
Power Dissipation Ambient-Max | 2.4 W |
Pulsed Drain Current-Max (IDM) | 120 A |
Surface Mount | Yes |
Terminal Form | NO LEAD |
Terminal Position | BOTTOM |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |