2SK2901-01L
45 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET

From Fuji Electric Corp. of America

StatusACTIVE
Avalanche Energy Rating (Eas)462 mJ
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)45 A
Drain-source On Resistance-Max0.0150 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionTPACK-3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleIN-LINE
Pulsed Drain Current-Max (IDM)180 A
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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