2MBI400U4H-120-50
IGBT Array & Module Transistor, N Channel, 400 A, 2.05 V, 2.045 kW, 1.2 kV, Module

From FUJI ELECTRIC

Collector Emitter Voltage V(br)ceo:1.2 kV
Collector Emitter Voltage Vces:2.05 V
DC Collector Current:400 A
MSL:-
No. of Pins:7
Operating Temperature Max:150 °C
Power Dissipation Pd:2.045 kW
SVHC:To Be Advised
Transistor Case Style:Module
Transistor Polarity:N Channel
Transistor Type:IGBT Module

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