2SK3788-01
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 21Milliohms; ID 92A; TO-247; PD 410W; VGS +/-3

From Fuji Semiconductor

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions15.5 x 5 x 21.5 mm
Forward Diode Voltage1.5 V
Forward Transconductance24 S
Height21.5 mm
Length15.5 mm
Maximum Continuous Drain Current92 A
Maximum Drain Source Resistance26 mΩ
Maximum Drain Source Voltage150 V
Maximum Gate Source Voltage±30 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation410 W
Minimum Operating Temperature-55 °C
Mounting TypeThrough Hole
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeTO-247
Pin Count3
Typical Gate Charge @ Vgs80 nC @ 10 V
Typical Input Capacitance @ Vds3800 pF @ 75 V
Typical Turn On Delay Time40 ns
Typical TurnOff Delay Time56 ns
Width5 mm

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