2SK3549-01 MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 1.08 Ohms; ID +/-40A; TO-247; PD 270W; VGS +/-3
From Fuji Semiconductor
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Dimensions | 15.5 x 5 x 21.5 mm |
| Forward Diode Voltage | 1.5 V |
| Forward Transconductance | 12 S |
| Height | 21.5 mm |
| Length | 15.5 mm |
| Maximum Continuous Drain Current | ±10 A |
| Maximum Drain Source Resistance | 1.4 Ω |
| Maximum Drain Source Voltage | 900 V |
| Maximum Gate Source Voltage | ±30 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 270 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-247 |
| Pin Count | 3 |
| Typical Gate Charge @ Vgs | 34.5 nC @ 10 V |
| Typical Input Capacitance @ Vds | 1250 pF @ 25 V |
| Typical Turn On Delay Time | 26 ns |
| Typical TurnOff Delay Time | 60 ns |
| Width | 5 mm |
