2SK3519-01
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.65Ohm; ID +/-9A; TO-220AB; PD 135W; VGS +/-30

From Fuji Semiconductor

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions10 x 4.5 x 15 mm
Forward Diode Voltage1.5 V
Forward Transconductance7 S
Height15 mm
Length10 mm
Maximum Continuous Drain Current±9 A
Maximum Drain Source Resistance0.85 Ω
Maximum Drain Source Voltage500 V
Maximum Gate Source Voltage±30 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation135 W
Minimum Operating Temperature-55 °C
Mounting TypeThrough Hole
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeTO-220AB
Pin Count3
Typical Gate Charge @ Vgs20 nC @ 10 V
Typical Input Capacitance @ Vds750 pF @ 25 V
Typical Turn On Delay Time14 ns
Typical TurnOff Delay Time24 ns
Width4.5 mm

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