2SK2765-01 MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 1.62 Ohms; ID +/-7A; TO-3P; PD 125W; VGS +/-35V
From Fuji Semiconductor
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Dimensions | 15.5 x 4.5 x 19.5 mm |
| Forward Diode Voltage | 1.5 V |
| Forward Transconductance | 4 S |
| Height | 19.5 mm |
| Length | 15.5 mm |
| Maximum Continuous Drain Current | ±7 A |
| Maximum Drain Source Resistance | 2 Ω |
| Maximum Drain Source Voltage | 800 V |
| Maximum Gate Source Voltage | ±35 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 125 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-3P |
| Pin Count | 3 |
| Typical Input Capacitance @ Vds | 900 pF @ 25 V |
| Typical Turn On Delay Time | 25 ns |
| Typical TurnOff Delay Time | 80 ns |
| Width | 4.5 mm |
