MRF5003R1
N-Channel Enhancement MOSFET

From Motorola

@(VDS) (V) (Test Condition)10
@Freq. (Hz) (Test Condition)1M
@I(D) (A) (Test Condition)500m
@V(DS) (V) (Test Condition)12.5
@V(GS) (V) (Test Condition)20
Absolute Max. Power Diss. (W)12.5
C(iss) Max. (F)16.5
I(D) Abs. Drain Current (A)1.7
I(DSS) Max. (A)1.0m
I(GSS) Max. (A)1.0u
MilitaryN
PackageN/A
V(BR)DSS (V)36
V(BR)GSS (V)20
V(GS)th Max. (V)3.5
V(GS)th Min. (V)1.25
g(fs) Min. (S) Trans. conduct.600m

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