MD2219AFHX NPN Multi-Chip Composite Transistor Pair
From Motorola
| @I(C) (A) (Test Condition) | 1.0m |
| @V(CBO) (V) (Test Condition) | 60 |
| @V(CE) (V) (Test Condition) | 10 |
| Emitter-Base Diode (Y/N) | No |
| I(C) Abs.(A) Collector Current | 800m |
| I(CBO) Max. (A) | 10n |
| Military | N |
| Number of Devices | 2 |
| P(D) Max.(W) Power Dissipation | 400m |
| Package | FP |
| Semiconductor Material | Silicon |
| Type (NPN/PNP) | NPN |
| V(BR)CBO (V) | 75 |
| V(BR)CEO (V) | 50 |
| h(FE) Max. Current gain. | 325 |
| h(FE) Min. Static Current Gain | 75 |
