FQU2N60C 1.9 A, 600 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET
From Fairchild Semiconductor Corporation
| Status | ACTIVE |
| Avalanche Energy Rating (Eas) | 120 mJ |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600 V |
| Drain Current-Max (ID) | 1.9 A |
| Drain-source On Resistance-Max | 4.7 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | ROHS COMPLIANT, IPAK-3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Pulsed Drain Current-Max (IDM) | 7.6 A |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
