FDS6672AS62Z 12.5 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
From Fairchild Semiconductor Corporation
Status | ACTIVE-UNCONFIRMED |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 12.5 A |
Drain-source On Resistance-Max | 0.0080 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | SO-8 |
Number of Elements | 1 |
Number of Terminals | 8 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Pulsed Drain Current-Max (IDM) | 50 A |
Surface Mount | Yes |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |