FDC2612_F095
MOSFET N-CH 200V 1.1A 6-SSOT

From Fairchild Semiconductor

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C1.1A (Ta)
DatasheetsFDC2612
Drain to Source Voltage (Vdss)200V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs11nC @ 10V
Input Capacitance (Ciss) @ Vds234pF @ 100V
Mounting TypeSurface Mount
PCN Design/SpecificationMold Compound 08/April/2008
Package / CaseSOT-23-6 Thin, TSOT-23-6
PackagingTape & Reel (TR)
Power - Max800mW
Product PhotosPowerTrench Series
Rds On (Max) @ Id, Vgs725 mOhm @ 1.1A, 10V
SeriesPowerTrench®
Standard Package3,000
Supplier Device Package6-SSOT
Vgs(th) (Max) @ Id4.5V @ 250µA

External links