Product Datasheet Search Results:
4 Pages, 42 KB, Original- FS2VS-14A
- Mitsubishi Electric & Electronics Usa, Inc.
- 2 A, 700 V, 9.75 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 181 KB, Scan- FS2VS-14A-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 2 A, 700 V, 9.75 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 181 KB, Scan- FS2VS-14A-T2
- Mitsubishi Electric & Electronics Usa, Inc.
- 2 A, 700 V, 9.75 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 42 KB, Original- FS2VS-14A
- Powerex Power Semiconductors
- Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Product Details Search Results:
Mitsubishichips.com/FS2VS-14A
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"6 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"2 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECT...
1439 Bytes - 22:44:39, 29 November 2024
Mitsubishichips.com/FS2VS-14A-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"9.75 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"700 V","Transistor Application":"SWITCHING","Surface M...
1502 Bytes - 22:44:39, 29 November 2024
Mitsubishichips.com/FS2VS-14A-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"9.75 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"700 V","Transistor Application":"SWITCHING","Surface M...
1499 Bytes - 22:44:39, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| SKD30-14A1.pdf | 0.24 | 1 | Request | |
| SKD50-14A3.pdf | 0.24 | 1 | Request | |
| SKB30-14A1.pdf | 0.45 | 1 | Request | |
| CECX-D-14A-2.pdf | 64.78 | 1 | Request | |
| LEHZ25K2-14A.pdf | 9.22 | 1 | Request | |
| Y-14A.pdf | 10.84 | 1 | Request | |
| I-14A.pdf | 10.84 | 1 | Request | |
| LEHZ25LK2-14A.pdf | 9.22 | 1 | Request | |
| LEHZ25K2-14A-S3.pdf | 9.22 | 1 | Request | |
| LEHZ25K2-14A-S11N1.pdf | 9.22 | 1 | Request | |
| VBO25-14AO2.pdf | 0.08 | 1 | Request | |
| VBO13-14AO2.pdf | 0.08 | 1 | Request |
