Product Datasheet Search Results:
4 Pages, 190 KB, Scan- FS2VS-12-T2
- Mitsubishi Electric & Electronics Usa, Inc.
- 2 A, 600 V, 6.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Mitsubishichips.com/FS2VS-12-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"6.4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Transistor Application":"SWITCHING","Surface Mo...
1494 Bytes - 03:21:13, 02 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| GYG102CC2-T2E.pdf | 2.34 | 1 | Request | |
| GYG182BC2-T2G.pdf | 2.34 | 1 | Request | |
| GYG152CC2-T2E-B.pdf | 2.34 | 1 | Request | |
| GYG292BC2-T2G-B.pdf | 2.34 | 1 | Request | |
| GYS500DC2-T2A-B.pdf | 2.34 | 1 | Request | |
| GYG501BC2-T2E.pdf | 2.34 | 1 | Request | |
| GYG501CC2-T2E-B.pdf | 2.34 | 1 | Request | |
| GYG851BC2-T2E-B.pdf | 2.34 | 1 | Request | |
| GYG132BC2-T2E.pdf | 2.34 | 1 | Request | |
| GYS751DC2-T2A-B.pdf | 2.34 | 1 | Request | |
| GYG132BC2-T2E-B.pdf | 2.34 | 1 | Request | |
| GYS401DC2-T2A.pdf | 2.34 | 1 | Request |
