Product Datasheet Search Results:
4 Pages, 42 KB, Original- FS2AS-14A
- Mitsubishi Electric & Electronics Usa, Inc.
- 2 A, 700 V, 9.75 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 192 KB, Scan- FS2AS-14A-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 2 A, 700 V, 9.75 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 192 KB, Scan- FS2AS-14A-T2
- Mitsubishi Electric & Electronics Usa, Inc.
- 2 A, 700 V, 9.75 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 42 KB, Original- FS2AS-14A
- Powerex Power Semiconductors
- Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Product Details Search Results:
Mitsubishichips.com/FS2AS-14A
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"6 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"2 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECT...
1441 Bytes - 03:18:04, 02 December 2024
Mitsubishichips.com/FS2AS-14A-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"9.75 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"700 V","Transistor Application":"SWITCHING","Surface M...
1497 Bytes - 03:18:04, 02 December 2024
Mitsubishichips.com/FS2AS-14A-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"9.75 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"700 V","Transistor Application":"SWITCHING","Surface M...
1498 Bytes - 03:18:04, 02 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| EEUFS2A680L.pdf | 0.85 | 1 | Request | |
| EEUFS2A560L.pdf | 0.85 | 1 | Request | |
| EEUFS2A470L.pdf | 0.85 | 1 | Request | |
| EEUFS2A151.pdf | 0.85 | 1 | Request | |
| EEUFS2A390B.pdf | 0.85 | 1 | Request | |
| EEUFS2A391.pdf | 0.85 | 1 | Request | |
| EEUFS2A470B.pdf | 0.85 | 1 | Request | |
| EEUFS2A221.pdf | 0.85 | 1 | Request | |
| EEUFS2A270.pdf | 0.85 | 1 | Request | |
| EEUFS2A221B.pdf | 0.85 | 1 | Request | |
| EEUFS2A121L.pdf | 0.85 | 1 | Request | |
| EEUFS2A270B.pdf | 0.85 | 1 | Request |
