Product Datasheet Search Results:
- FS20VS-6-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 20 A, 300 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Mitsubishichips.com/FS20VS-6-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"300 V","Transistor Application":"SWITCHING","Surfa...
1497 Bytes - 00:41:38, 30 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
FS20R06W1E3.pdf | 0.57 | 1 | Request | |
FS20R06W1E3_B11.pdf | 0.53 | 1 | Request | |
FS200R12KT4R_B11.pdf | 0.51 | 1 | Request | |
FS200R12KT4R.pdf | 0.50 | 1 | Request | |
FS20R06VE3.pdf | 0.25 | 1 | Request | |
FS200R12PT4.pdf | 0.57 | 1 | Request | |
FS200R07N3E4R_B11.pdf | 0.51 | 1 | Request | |
FS200R07A1E3.pdf | 0.30 | 1 | Request | |
FS20R06VE3_B2.pdf | 0.26 | 1 | Request | |
FS200R12PT4P.pdf | 0.70 | 1 | Request | |
FS200R06KE3.pdf | 0.34 | 1 | Request | |
IFS200V12PT4.pdf | 0.36 | 1 | Request |