Product Datasheet Search Results:

FS20VS-6-T1.pdf4 Pages, 190 KB, Scan
FS20VS-6-T1
Mitsubishi Electric & Electronics Usa, Inc.
20 A, 300 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Mitsubishichips.com/FS20VS-6-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"300 V","Transistor Application":"SWITCHING","Surfa...
1497 Bytes - 00:42:35, 28 February 2025

Documentation and Support

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File NameFile Size (MB)DocumentMOQSupport
FS200R07N3E4R.pdf0.501Request
FS200R07N3E4R_B11.pdf0.511Request
FS200R06KE3.pdf0.341Request
FS200R12PT4P.pdf0.701Request
FS20R06W1E3.pdf0.571Request
FS20R06W1E3_B11.pdf0.531Request
FS200R12KT4R.pdf0.501Request
FS200R12KT4R_B11.pdf0.511Request
FS20R06XL4.pdf0.231Request
IFS200V12PT4.pdf0.361Request
FS20R06VE3.pdf0.251Request
FS200R12PT4.pdf0.571Request