Product Datasheet Search Results:

FS20VS-5-T2.pdf4 Pages, 186 KB, Scan
FS20VS-5-T2
Mitsubishi Electric & Electronics Usa, Inc.
20 A, 250 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Mitsubishichips.com/FS20VS-5-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"250 V","Transistor Application":"SWITCHING","Surfa...
1498 Bytes - 00:29:39, 30 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
FS20R06W1E3.pdf0.571Request
FS20R06W1E3_B11.pdf0.531Request
FS200R12KT4R_B11.pdf0.511Request
FS200R12KT4R.pdf0.501Request
FS20R06VE3.pdf0.251Request
FS200R12PT4.pdf0.571Request
FS200R07N3E4R_B11.pdf0.511Request
FS200R07A1E3.pdf0.301Request
FS20R06VE3_B2.pdf0.261Request
FS200R12PT4P.pdf0.701Request
FS200R06KE3.pdf0.341Request
IFS200V12PT4.pdf0.361Request