Product Datasheet Search Results:
4 Pages, 37 KB, Original- FS10VS-06
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 60 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S
4 Pages, 195 KB, Scan- FS10VS-06-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 60 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S
4 Pages, 195 KB, Scan- FS10VS-06-T2
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 60 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S
Product Details Search Results:
Mitsubishichips.com/FS10VS-06
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0780 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Surfac...
1495 Bytes - 13:39:09, 22 November 2024
Mitsubishichips.com/FS10VS-06-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0780 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Surfac...
1513 Bytes - 13:39:09, 22 November 2024
Mitsubishichips.com/FS10VS-06-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0780 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Surfac...
1513 Bytes - 13:39:09, 22 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| S8VS-06024A-F.pdf | 0.33 | 1 | Request | |
| S8VS-06024B-F.pdf | 0.33 | 1 | Request | |
| S8VS-06024B.pdf | 0.33 | 1 | Request | |
| S8VS-06024A.pdf | 0.33 | 1 | Request |
