Product Datasheet Search Results:
- FS100UMJ-03F
- Renesas Technology / Hitachi Semiconductor
- FET Transistor, High-Speed Switching Use Nch Power MOS FET
- FS100UMJ-03F-A8
- Renesas Technology / Hitachi Semiconductor
- FET Transistor, High-Speed Switching Use Nch Power MOS FET
- FS100UMJ-03
- Mitsubishi Electric & Electronics Usa, Inc.
- 100 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
- FS100UMJ-03
- Mitsubishi Electric Semiconductor
- MITSUBISHI Nch POWER MOSFET
- FS100UMJ-03F
- Renesas Electronics
- 100 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- FS100UMJ-03F-A8
- Renesas Electronics
- 100 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Mitsubishichips.com/FS100UMJ-03
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"400 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"100 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER...
1489 Bytes - 13:13:48, 28 November 2024
Renesas.com/FS100UMJ-03F
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"400 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"100 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER...
1444 Bytes - 13:13:48, 28 November 2024
Renesas.com/FS100UMJ-03F-A8
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"400 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"100 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER...
1462 Bytes - 13:13:48, 28 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
FS100R07N3E4_B11.pdf | 0.51 | 1 | Request | |
FS100R12KT4.pdf | 0.27 | 1 | Request | |
FS100R07N2E4.pdf | 0.50 | 1 | Request | |
FS100R12KT4G_B11.pdf | 0.29 | 1 | Request | |
FS100R12KS4.pdf | 0.26 | 1 | Request | |
FS100R07N3E4.pdf | 0.50 | 1 | Request | |
FS100R07N2E4_B11.pdf | 0.51 | 1 | Request | |
FS100R12KT3.pdf | 0.32 | 1 | Request | |
FS100R07PE4.pdf | 0.99 | 1 | Request | |
FS100R12PT4.pdf | 0.57 | 1 | Request | |
FS100R17KE3.pdf | 0.28 | 1 | Request | |
FS100R17PE4.pdf | 0.56 | 1 | Request |