Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"210 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"11.2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","Current - Continuous Drain (Id) @ 25\u00b0C":"2.8A (Tc)","Gate Charge (Qg) @ Vgs":"19nC @ 10V","Product Photos":"TO-251-3-Short-Leads,-IPak,-TO-251AA","PCN Design/Specification":"Passivation Material 26/June/2007","Rds On (Max) @ Id, Vgs":"2.5 Ohm @ 1.4A, 10V","Datasheets":"FQD5N60C, FQU5N60C","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Pa...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"2.8(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"600(V)","Packaging":"Rail/Tube","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"IPAK","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...