Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package / Case":"TO-261-4, TO-261AA","Current - Continuous Drain (Id) @ 25\u00b0C":"2.8A (Tc)","Gate Charge (Qg) @ Vgs":"6.4nC @ 5V","Product Photos":"SOT-223-4","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"110 mOhm @ 1.4A, 10V","Datasheets":"FQT13N06L MA04A Pkg Drawing","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1",...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Rise Time":"90 ns","Typical Turn-Off Delay Time":"20 ns","Description":"Value","Maximum Continuous Drain Current":"2.8 A","Package":"4SOT-223","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"8 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"110@10V mOhm","Manufacturer":"Fairchild Semiconductor","Typical Fall Time":"40 ns"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"2.8(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"2.1(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...