Product Datasheet Search Results:
19 Pages, 480 KB, Original- FMW16N60GSC
- Fuji Electric Corp. Of America
- 16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AA
19 Pages, 480 KB, Original- FMW16N60GSC-K1
- Fuji Electric Corp. Of America
- 16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AA
Product Details Search Results:
Fujielectric.co.jp/FMW16N60GSC
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"243 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1496 Bytes - 22:46:23, 18 December 2024
Fujielectric.co.jp/FMW16N60GSC-K1
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"243 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1518 Bytes - 22:46:23, 18 December 2024
