{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"826 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...