Product Datasheet Search Results:

FK20VS-6-T2.pdf5 Pages, 211 KB, Scan
FK20VS-6-T2
Mitsubishi Electric & Electronics Usa, Inc.
20 A, 300 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Mitsubishichips.com/FK20VS-6-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"300 V","Transistor Application":"SWITCHING","Surfa...
1498 Bytes - 00:51:04, 30 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
ZP3P-T50PTSFK20-B01.pdf2.101Request
ZP3P-T20PTSFK20-B5.pdf2.101Request
ZP3P-T35PTSFK20-B01.pdf2.101Request
ZP3P-T25PTSFK20-B5.pdf2.101Request
IXFK20N80Q.pdf0.091Request
IXFK20N120P.pdf0.111Request
IXFK200N10P.pdf0.091Request
IXFK20N80Q.pdf0.141Request
IXFK20N120P.pdf0.111Request
IXFK200N10P.pdf0.111Request
IXFK20N120.pdf0.551Request
3SU1950-0FK20-0AA0-ZY19.pdf51.691Request