Product Datasheet Search Results:
5 Pages, 202 KB, Scan- FK10VS-9-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 450 V, 0.92 ohm, N-CHANNEL, Si, POWER, MOSFET
5 Pages, 202 KB, Scan- FK10VS-9-T2
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 450 V, 0.92 ohm, N-CHANNEL, Si, POWER, MOSFET
5 Pages, 61 KB, Original- FK10VS-9
- Mitsubishi Electric Semiconductor
- MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
1 Pages, 65 KB, Scan- FK10VS-9
- Powerex, Inc. - Pa
- 10 A, 450 V, 0.92 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Mitsubishichips.com/FK10VS-9-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"450 V","Transistor Application":"SWITCHING","Surfa...
1501 Bytes - 19:44:39, 22 November 2024
Mitsubishichips.com/FK10VS-9-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"450 V","Transistor Application":"SWITCHING","Surfa...
1501 Bytes - 19:44:39, 22 November 2024
Pwrx.com/FK10VS-9
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"450 V","Transistor Application":"SWITCHING","Surfa...
1416 Bytes - 19:44:39, 22 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| ZP3P-T20PTSFK10-B5.pdf | 2.10 | 1 | Request | |
| ZP3P-T25PTSFK10-B5.pdf | 2.10 | 1 | Request | |
| ZPR10CFK10-04-A10.pdf | 6.62 | 1 | Request | |
| ZP3P-T35PTSFK10-B01.pdf | 2.10 | 1 | Request | |
| ZPT40DFK10-08-A14.pdf | 5.68 | 1 | Request | |
| ZPT16BFK10-B5-A10.pdf | 5.68 | 1 | Request | |
| ZPR10CFK10-06-A10.pdf | 6.62 | 1 | Request | |
| ZP2-T3507WFK10-04.pdf | 5.57 | 1 | Request | |
| ZPT13BFK10-06-A10.pdf | 5.68 | 1 | Request | |
| ZPT16BFK10-06-A10.pdf | 5.68 | 1 | Request | |
| ZP3P-T50PTSFK10-B01.pdf | 2.10 | 1 | Request | |
| ZPT13BFK10-04-A10.pdf | 5.68 | 1 | Request |
