Product Datasheet Search Results:
5 Pages, 202 KB, Scan- FK10VS-10-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 500 V, 1.13 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Mitsubishichips.com/FK10VS-10-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.13 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Application":"SWITCHING","Surface...
1505 Bytes - 12:09:39, 22 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FQ1011N-10-T100.pdf | 1.69 | 1 | Request | |
| FU20-10-T1-FSM.pdf | 0.14 | 1 | Request | |
| FU20-10-T1-NPT.pdf | 0.14 | 1 | Request | |
| FU20-10-T1-NPT_FPS.pdf | 0.14 | 1 | Request | |
| FU20-10-T1-NPT_Q.pdf | 0.14 | 1 | Request |
