{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"40A","Switching Energy":"-","Vce(on) (Max) @ Vge, Ic":"2V @ 15V, 20A","PCN Design\/Specification":"Heat Sink Drawing Update 11\/Feb\/2014","Td (on\/off) @ 25\u00b0C":"-","Input Type":"Standard","Package \/ Case":"TO-3P-3, SC-65-3","Gate Charge":"137nC","Product Photos":"TO-3P-3,TO-247-3","PCN Assembly\/Origin":"Assembly Site Transfer 06\/Apr\/2015","Voltage - Collector Emitter Breakdown (Max)":"1200V","Reverse Recovery Time (trr...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"298 W","Turn-off Time-Nom (toff)":"360 ns","Collector Current-Max (IC)":"40 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"109 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V...

{"Collector Current (DC) ":"40(A)","Operating Temperature (Min)":"-55C","Mounting":"Through Hole","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b125(V)","Channel Type":"N","Packaging":"Rail\/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-3P","Configuration":"Single","Pin Count":"3 +Tab"}...