{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT-227 Package","Family":"FETs - Modules","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"10","Supplier Device Package":"SOT-227B","Input Capacitance (Ciss) @ Vds":"10700pF @ 25V","Rds On (Max) @ Id, Vgs":"6.5 mOhm @ 108A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"480W","Package \/ Case":"SOT-227-4, miniBLOC","Mounting Type":"Chassis Mount","Dra...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"180 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"720 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"180 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0065 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"720 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"*","Family":"FETs - Modules","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"*","Supplier Device Package":"*","Datasheets":"FB180SA10P","Rds On (Max) @ Id, Vgs":"6.5 mOhm @ 180A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"480W","Standard Package":"160","Input Capacitance (Ciss) @ Vds":"10700pF @ 25V","Drain to Source Voltage (Vdss)":"100V","Current - Continuous D...

{"Category":"Power MOSFET","Dimensions":"38.3 x 25.7 x 12.3 mm","Maximum Continuous Drain Current":"180 A","Width":"25.7 mm","Maximum Drain Source Voltage":"100 V","Package Type":"SOT-227","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"250 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"45 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"10700 pF @ 25 V","Length":"38....