Product Datasheet Search Results:
- F3L150R07W2E3-B11
- Infineon Technologies Ag
- 150 A, 650 V, N-CHANNEL IGBT
Product Details Search Results:
Infineon.com/F3L150R07W2E3-B11
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"480 ns","Collector Current-Max (IC)":"150 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"155 ns","EU RoHS Compliant":"Yes","Configuration":"COMPLEX","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"650 V","Channel Type":"N-CHANNEL","Transistor Application":"POWER CO...
1428 Bytes - 16:45:28, 23 November 2024