VTB5051UVJH
SILICON PHOTODIODES

From Excelitas Technologies Sensors

Active Area0.023 sq.in.
Angle, Response±50 °
Capacitance, Junction3 nF
Current, Dark250 pA
Current, Short Circuit130 μA
Package TypeTO-5
Primary TypePhoto
Resistance, Shunt0.56 Gigaohms
Spectral Application Range200 to 1100 nm
Spectral Sensitivity0.1 A/W
Temperature, Operating-40 to +110 °C
Voltage, Breakdown40 V
Voltage, Open Circuit490 mV

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