VTB5051UVJH SILICON PHOTODIODES
From Excelitas Technologies Sensors
Active Area | 0.023 sq.in. |
Angle, Response | ±50 ° |
Capacitance, Junction | 3 nF |
Current, Dark | 250 pA |
Current, Short Circuit | 130 μA |
Package Type | TO-5 |
Primary Type | Photo |
Resistance, Shunt | 0.56 Gigaohms |
Spectral Application Range | 200 to 1100 nm |
Spectral Sensitivity | 0.1 A/W |
Temperature, Operating | -40 to +110 °C |
Voltage, Breakdown | 40 V |
Voltage, Open Circuit | 490 mV |