FHX35LG
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET

From Sumitomo Electric Industries, Ltd.

StatusACTIVE
Case ConnectionSOURCE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min4 V
EU RoHS CompliantYes
FET TechnologyHIGH ELECTRON MOBILITY
Highest Frequency BandKU BAND
Lead FreeYes
Mfr Package DescriptionHERMETIC SEALED, METAL CERAMIC, CASE LG, SMT, 4 PIN
Number of Elements1
Number of Terminals4
Operating ModeDEPLETION
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StyleDISK BUTTON
Power Gain-Min (Gp)8.5 dB
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormFLAT
Terminal PositionRADIAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialGALLIUM ARSENIDE
Transistor TypeRF SMALL SIGNAL

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