M13S64164A-5TIG 4M X 16 DDR DRAM, 0.7 ns, PDSO66
From Elite Semiconductor Memory Technology, Inc.
Status | ACTIVE |
Access Mode | FOUR BANK PAGE BURST |
Access Time-Max (tRAC) | 0.7000 ns |
Memory Density | 6.71E7 deg |
Memory IC Type | DDR DRAM |
Memory Width | 16 |
Mfr Package Description | 0.400 X 0.875 INCH, 0.65 MM, LEAD FREE, TSOP2-66 |
Number of Functions | 1 |
Number of Ports | 1 |
Number of Terminals | 66 |
Number of Words | 4.19E6 words |
Number of Words Code | 4M |
Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | -40 Cel |
Organization | 4M X 16 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE |
Supply Voltage-Max (Vsup) | 2.7 V |
Supply Voltage-Min (Vsup) | 2.3 V |
Supply Voltage-Nom (Vsup) | 2.5 V |
Surface Mount | Yes |
Temperature Grade | INDUSTRIAL |
Terminal Form | GULL WING |
Terminal Pitch | 0.6500 mm |
Terminal Position | DUAL |