M13S2561616A-5TG
16M X 16 DDR DRAM, 0.75 ns, PDSO66

From Elite Semiconductor Memory Technology, Inc.

StatusACTIVE
Access ModeFOUR BANK PAGE BURST
Access Time-Max (tRAC)0.7500 ns
Memory Density2.68E8 deg
Memory IC TypeDDR DRAM
Memory Width16
Mfr Package Description0.400 X 875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
Number of Functions1
Number of Ports1
Number of Terminals66
Number of Words1.68E7 words
Number of Words Code16M
Operating ModeSYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization16M X 16
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Supply Voltage-Max (Vsup)2.7 V
Supply Voltage-Min (Vsup)2.3 V
Supply Voltage-Nom (Vsup)2.5 V
Surface MountYes
Temperature GradeCOMMERCIAL
Terminal FormGULL WING
Terminal Pitch0.6500 mm
Terminal PositionDUAL

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