M12S64164A-10TG
4M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54

From Elite Semiconductor Memory Technology, Inc.

StatusACTIVE
Access ModeFOUR BANK PAGE BURST
Access Time-Max (tRAC)8 ns
Memory Density6.71E7 deg
Memory IC TypeSYNCHRONOUS DRAM
Memory Width16
Mfr Package Description0.400 INCH, LEAD FREE, TSOP2-54
Number of Functions1
Number of Ports1
Number of Terminals54
Number of Words4.19E6 words
Number of Words Code4M
Operating ModeSYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization4M X 16
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE, THIN PROFILE
Supply Voltage-Max (Vsup)2.7 V
Supply Voltage-Min (Vsup)2.3 V
Supply Voltage-Nom (Vsup)2.5 V
Surface MountYes
Temperature GradeCOMMERCIAL
Terminal FormGULL WING
Terminal Pitch0.8000 mm
Terminal PositionDUAL

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