M12L64164A-7BIG
4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54

From Elite Semiconductor Memory Technology, Inc.

StatusACTIVE
Access ModeFOUR BANK PAGE BURST
Access Time-Max (tRAC)6 ns
Memory Density6.71E7 deg
Memory IC TypeSYNCHRONOUS DRAM
Memory Width16
Mfr Package Description8 X 8 MM, LEAD FREE, FVBGA
Number of Functions1
Number of Ports1
Number of Terminals54
Number of Words4.19E6 words
Number of Words Code4M
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min-40 Cel
Organization4M X 16
Package Body MaterialPLASTIC/EPOXY
Package ShapeSQUARE
Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Supply Voltage-Max (Vsup)3.6 V
Supply Voltage-Min (Vsup)3 V
Supply Voltage-Nom (Vsup)3.3 V
Surface MountYes
Temperature GradeINDUSTRIAL
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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