M12L64164A-7BIG 4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
From Elite Semiconductor Memory Technology, Inc.
| Status | ACTIVE |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max (tRAC) | 6 ns |
| Memory Density | 6.71E7 deg |
| Memory IC Type | SYNCHRONOUS DRAM |
| Memory Width | 16 |
| Mfr Package Description | 8 X 8 MM, LEAD FREE, FVBGA |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 54 |
| Number of Words | 4.19E6 words |
| Number of Words Code | 4M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 4M X 16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Supply Voltage-Max (Vsup) | 3.6 V |
| Supply Voltage-Min (Vsup) | 3 V |
| Supply Voltage-Nom (Vsup) | 3.3 V |
| Surface Mount | Yes |
| Temperature Grade | INDUSTRIAL |
| Terminal Form | BALL |
| Terminal Pitch | 0.8000 mm |
| Terminal Position | BOTTOM |
